WebNov 9, 2024 · The anti-ferroelectric order in β′-In 2 Se 3 and ferroelectric order of β*-In 2 Se 3 are identified, respectively, down to the 2D limit by comprehensive investigations of structural and spectroscopic signatures, including the lattice distortion, the spatial profile of images, the formation of domain structure, and the electronic band ... WebJan 1, 2005 · Ga 2 Te 3 single crystals were grown by a modification of the travelling heater method technique (THM). The samples used in this work were prepared by this new …
Tuning the electronic properties of two dimensional InSe/In2
WebOct 6, 2024 · Recently, a new class of 2D ferroelectric materials, M 2 X 3 (M = Al, Ga, In; X = S, Se, Te), has been theoretically proposed, and a few of these materials have been … WebJun 1, 2024 · Room temperature ferroelectric thin films are the key element of high-density nonvolatile memories in modern electronics. However, with the further miniaturization of the electronic devices beyond the Moore’s law, conventional ferroelectrics suffer great challenge arising from the critical thickness effect, where the ferroelectricity is unstable if the film … fisherman\u0027s market longview texas
Atomically thin α-In2Se3: an emergent two-dimensional room …
WebHere, we propose that, in 2D materials with out-of-plane ferroelectricity, the antibonding nature of the valence band maximum and conduction band minimum and polarized charge distribution induced by ferroelectricity give rise to giant changes of the bandgap under curvature strain field. WebIn the present study, 2D In 2 Se 3 flakes down to monolayers are grown by the chemical vapor deposition (CVD) technique on a mica substrate with their structural, optical and ferroelectric properties being studied. The effect of growth parameters (time of growth and Ar flow rate) on the shape and size of the deposited flakes was studied. WebOct 30, 2024 · Both ferroelectric domains with opposite polarization and the tested amplitude and phase curve proved that this semiconductor exhibits hysteresis behavior during polarization. In the α -In 2 Se 3 /WSe 2 vertical heterostructure device, the switchable diode effect and nonvolatile memory phenomenon showed a high on/off ratio and a small ... fisherman\u0027s market longview tx